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It means that all manufacturing operations are performed on silicon wafers containing thousands of devices. This ensures a similar scale of economy as with semiconductor integrated circuits.

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The use of silicon as the raw material, deposition of thin films and patterning by photolithographic means are similar to circuits. However, since sensing the three dimensional world requires three dimensional sensors, some specific tools and processes have been added to the 3D MEMS toolbox.

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Mechanical sensors are based on springs, inertial bodies and sensing capacitors. Since the s wet chemical etching of silicon in alkaline etchants has been used. This method produces a crystal direction dependent anisotropy of etch speed that enables precise control of dimensions.

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This traditional etching has been superseded by a dry etching method: deep reactive ion etching or DRIE. This offers anisotropy based on direction of the ion flux normal to the wafer surface. DRIE enables much more design freedom and a higher density of structures than wet etching and is the chosen technology for gyros and multi-axis accelerometers. For precise control of the etching process in the vertical direction and electrical isolation of the silicon structures, an isolation layer beneath the active structures is required. These wafers allow good control of the vertical dimensions of the 3D MEMS structures, a high degree of design freedom of the in-plane shape of the structures and good isolation with low parasitic capacitances between them.

Integrated circuits are passivated from environmental influences by deposited layers of selected materials on the top of the wafer.

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The MEMS team gathers researchers of various and complementary backgrounds. Research projects conducted within the MEMS team are carried out in the framework of the LAAS technological platforms, among which an extensive cleanroom, characterization facilities and a biochemical lab, allowing our team to work at all stages of MEMS fabrication, from the device design to its integration.


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